Giant tunnel magnetoresistance and high annealing stability in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with synthetic pinned layer

By Young Min Lee, J. Hayakawa, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno. 2006

174 citations recorded by the source corpus.

We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO barriers that had CoFe∕Ru∕CoFeB synthetic ferrimagnet pinned layers with varying Ru spacer thickness (tRu). The TMR ratio increased with increasing annealing temperature (Ta) and tRu, reaching 361% at Ta=425°C, whereas the TMR ratio of the MTJs with pinned layers without Ru spacers decreased at Ta over 325°C. Ruthenium spacers play an important role in forming a (001)-oriented bcc CoFeB pinned layer, resulting in a high TMR ratio through annealing at high temperatures.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics

View Paper: https://www.semanticscholar.org/paper/f94d114406a46493a16e2d28e0d8b5b243c8f89a

Citations in the corpus

• Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, unknown): “8 Ω · μm and over 361% from 500 to 10 Ω · μm [67]–[69].”
• Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics (2009, unknown): “764 , 765 , 766 As an illustration, Figure 34 shows the junction resistance vs.”
• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, unknown): “31 (Lee et al., 2006; Ikeda et al., 2008; Karthik et al., 2012).”