Spin-transfer pulse switching: From the dynamic to the thermally activated regime

By D. Bedau, H. Liu, J. Sun, Jordan A. Katine, E. Fullerton, S. Mangin, Andrew D. Kent. 2010

149 citations recorded by the source corpus.

The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (subnanoseconds to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which is subject to spin-polarized current pulses of variable amplitude and duration. Two physical regimes are clearly distinguished: a long pulse duration regime, in which reversal occurs by spin-transfer assisted thermal activation over an energy barrier, and a short-time large pulse amplitude regime, in which the switching probability is determined by the spin-angular momentum in the current pulse.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/f88478edf65e3c800d2e93d8164cc4c4b1562943

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Electronic, Optical and Magnetic Materials

Citations in the corpus

Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, background): “In C-STT devices, spin torque from the perpendicular polarizer causes the free layer magnetization to go out-ofplane, where it precesses around the demagnetizing field [24, 25], allowing for ultrafast precessional switching limited only by the ferromagnetic resonance (FMR) frequency of the bit.”
Basic principles of STT-MRAM cell operation in memory arrays (2013, background): “Experimental data [28, 75] and simulations [76, 77] give similar results for τ0.”
Spin-transfer torque magnetic memory as a stochastic memristive synapse (2014, background): “Device physicists have intensely studied this effect of intrinsic probability [4], [5], and circuit designers have proposed ideas like self-enabled programming to mitigate the issue [2].”
Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, background): “This is in striking contrast to FM STT (Bedau et al., 2010) or SOT (Garello et al., 2014) memories in which the theoretically extrapolated writing energy at ps would increase by three orders of magnitude compared to the state-of-the-art ns-switching devices.”