Ionic doping effect in ZrO2 resistive switching memory
By Haowei Zhang, B. Gao, Bing Sun, Guopeng Chen, L. Zeng, Lifeng Liu, Xiaohui Liu, Jing Lu, R. Han, Jinfeng Kang and 1 more. 2010
165 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/f83dc3f80635c9cb5cfe8a5fd99093f3421d271a
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In Electrical and Electronic Engineering
Citations in the corpus
- $\hbox{HfO}_{x}/\hbox{TiO}_{x}/\hbox{HfO}_{x}/ \hbox{TiO}_{x}$ Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity (2011, methodology): “Third, Ti may also diffuse into HfOx as the doping atoms to stabilize the filament formation [7].”
- Electronic properties of hafnium oxide: A contribution from defects and traps (2016, methodology): “Thus, like in Si3N4, ZrO2, and TiO2, the conduction in HfO2 proved to be bipolar.”