Operation of graphene transistors at gigahertz frequencies.

By Yu-ming Lin, K. Jenkins, A. Valdes-Garcia, J. Small, D. Farmer, Phaedon Avouris. Nano letters (Print), 2008

994 citations recorded by the source corpus.

Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T) = g(m)/(2piC(G)). The peak f(T) increases with a reduced gate length, and f(T) as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step toward the realization of graphene-based electronics for high-frequency applications.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f577c77656551c2129d71b9616ca2976a2c15e17

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Experimental Review of Graphene (2011, methodology): “It was observed that ft ∝ 1/L2G , so reducing the gate length from 500 nm to 150 nm resulted in the cutoff frequency rising from 3 GHz to 26 GHz (Lin et al., 2009).”
Flexible Electronics: The Next Ubiquitous Platform (2012, background): “Recently, novel fabrication techniques have allowed TFTs to harness the potential of 1-D semiconductors, such as CNT and NWs, as well as 2-D semiconductors and dielectrics such as graphene [39], [40] and molybdenum disulfide (MoS2) [41] and hexagonal boron nitride (h-BN) monolayers [42].”
Nobel Lecture: Graphene: Materials in the Flatland (2011, background): “Such characteristics make graphene field effect transistors extremely promising for high-frequency applications (Lin et al., 2009; Moon et al., 2009).”
Impermeability of graphene and its applications (2013, neutral): “[25] Lin YM, Jenkins KA, Valdes-Garcia A, Small JP, Farmer DB, Avouris P.”
Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz (2009, background): “The well-known relation fT = gm/(2πC) established for conventional FETs has recently been demonstrated to be also valid for graphene devices [3].”