Enhancing ferroelectricity in dopant-free hafnium oxide

By A. Pal, V. Narasimhan, Stephen L Weeks, K. Littau, D. Pramanik, T. Chiang. 2017

193 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f48eadabeddbe3178936e7fb0005fe0b8763628e

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In Electrical and Electronic Engineering

1. Hyunsang Hwang
2. Seungyeol Oh
3. Hyungwoo Kim
4. Alireza Kashir

Citations in the corpus

• Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering (2021, background): “Oxygen vacancy is believed to increase the stability of the o-phase in the HfO2-based thin films [37], yet it also causes the introduction of a locally distributed inhomogeneous internal field resulting in a pinched hysteresis loop at the pristine state [29-32].”