Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

By H. Liu, D. Bedau, D. Backes, Jordan A. Katine, J. Langer, Andrew D. Kent. 2010

156 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/ebb9dc34b960a08cfa8f7a6a162a699fb44efa29

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Pietro Gambardella
2. Juan G. Alzate
3. P. Amiri
4. Kang L. Wang
5. Kevin Garello
6. I. Miron
7. Olivier Boulle
8. Gilles Gaudin

In Condensed Matter Physics

1. Juan G. Alzate
2. P. Amiri
3. Kang L. Wang
4. Kevin Garello
5. Pietro Gambardella
6. Gilles Gaudin
7. I. Miron

In Electrical and Electronic Engineering

1. Kang L. Wang
2. Kevin Garello
3. Pietro Gambardella
4. I. Miron

Citations in the corpus

• Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, background): “An alternative to eliminate the initial incubation of I-STT devices is to include an additional out-of-plane polarizer (see figures 3(c) and (d)) [21–23].”
• Interface-Induced Phenomena in Magnetism (2016, unknown): “In this regime, the distinction between anti-damping and effective-field torques becomes less important; precessional switching has been demonstrated using both conventional spin-transfer torque [Lee, Pribiag, et al., 2009; Papusoi et al., 2009; Liu et al., 2010] and the effective field from voltage”
• Ultra-Fast Perpendicular Spin–Orbit Torque MRAM (2015, background): “Very fast switching (sub-ns) has been recently demonstrated using stacks where the magnetizations of the free and the fixed layers are perpendicular to the film plane [3]–[5].”