Very High Frequency Silicon Nanowire Electromechanical Resonators

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An atomic-resolution nanomechanical mass sensor. (2008, background): “Although many previous attempts at precision mass sensing have focused on doubly clamped geometrie”
Nanowire Transistor Performance Limits and Applications (2008, background): “This approach has led to the demonstration of singlecrystalline nanowire bridges [107] and nanoelectromechanical devices [112], [113].”
Second strain gradient elasticity of nano-objects (2016, background): “Amiot (2013) showed that these higher order moduli can also be identified from measurements of cantilever sensors and MEMS/NEMS.”
Cantilever-like micromechanical sensors (2011, background): “Thus, it is possible to make indirect mass change estimations in the atto- to zepto-gram range [26] by following the resonant frequency change of the cantilever (figure 1(c)).”
Mechanical systems in the quantum regime (2011, neutral): “045 [87]”
Dissipation in nanoelectromechanical systems (2014, background): “[129] achieved very high quality factors for silicon nanowire resonators at frequencies over 200 MHz; the quality factors scaled with the aspect ratio but not as strongly as  w L 3, which may be explained by imperfect clamping conditions.”
Nonlinear Dynamics and Its Applications in Micro- and Nanoresonators (2010, background): “platinum and silicon nanowires [100, 101], and electrostaticallyactuated nanobeams [102, 103], an example of which is shown in Fig.”