Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

By Christian Fager, José Carlos Pedro, N. Carvalho, Herbert Zirath. 2002

145 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e76ec6842a9a137f3da2fced15e7b99943e34635

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Pedro M. Cabral
2. Nuno Miguel Gonçalves Borges de Carvalho
3. José Carlos Pedro
4. Jim W. Milligan
5. S. T. Sheppard
6. Simon Wood
7. R. Pengelly
8. W. Pribble

Citations in the corpus

• A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs (2012, methodology): “The overall structure is based on the standard 13-element small-signal FET model.”
• Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design (2004, methodology): “Previous studies conducted for other FET device types [2], [15] led to the conclusion that those valleys or, sometimes, even double minima, can be explained as the interaction of small- and large-signal IMD.”