Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

By Q. Dai, Q. Shan, Jing Wang, S. Chhajed, Jaehee Cho, E. Fred Schubert, M. Crawford, D. Koleske, Min-ho Kim, Yongjo Park. 2010

210 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e4e5efb248cbc1d975aaae37bc26fecc790ccfc0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Xiaobing Luo
2. Sheng Liu
3. Kai Wang
4. Run Hu

In Materials Chemistry

1. Xiaobing Luo
2. Sheng Liu
3. Kai Wang
4. Run Hu

Citations in the corpus

• Heat and fluid flow in high-power LED packaging and applications (2016, methodology): “For simplicity, the recombination rate can be estimated by RSRH = An, where A is the SRH recombination coefficient and n is the carrier concentration [23].”