Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

By Y. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. Roth, T. Kamins, David A. B. Miller, J. Harris. Nature, 2005

799 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e319d7ef4babb2cdf615c1dc71373fd53086d6ef

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

Attojoule Optoelectronics for Low-Energy Information Processing and Communications (2016, methodology): “QCSE modulators typically use III-V quantum wells, but they can also use germanium quantum wells on silicon substrates [41], [67]–[83], with performance comparable to or better”
Silicon Photonics: The Next Fabless Semiconductor Industry (2013, neutral): “IEEE SOLID-STATE CIRCUITS MAGAZINE wIntEr 20 13 53 integrated onto the silicon platform, for example by bonding III-V material [48], epitaxially growing germanium [49], or cladding graphene [50] to build efficient electroabsorption modulators.”
Silicon Photonics (2006, background): “The reduction in emission with current density may be due to FCA and Auger recombination [74].”
Ring Resonator Modulators in Silicon for Interchip Photonic Links (2013, neutral): “The quantum-confined Stark effect in Ge/GeSi quantum wells can be more efficient [68], but the”
Engineering light absorption in semiconductor nanowire devices. (2009, methodology): “In our data analysis, it was assumed that η I is wavelength independent, making Q abs directly proportional to the extracted photocurrent; this is a commonly used assumption for photodetector”
Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies (2021, positive): “The FK effect and the QCS effect provide possible routes to implement compact, low-power, and high-speed electro-absorption modulators (EAMs) in SiPh.(31,143,144,146,149) Under the influence of an applied electric field, the band edge tilts to enhance the absorption coefficient for GeSi bulk materia”
Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators (2008, background): “(Ge-on-Si) with a high EA contrast similar to that of germanium QW structure”