Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators
By Jifeng Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, Jing Cheng, Lionel C. Kimerling, Jürgen Michel. 2008
516 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/745d7c13ab928530a593d20854b55edf4d632707
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In Electrical and Electronic Engineering
Citations in the corpus
- Regenerative oscillation and four-wave mixing in graphene optoelectronics (2012, background): “frequency optoelectronics, and all-optical signal processing. Sub-wavelength nanostructures in monolithic material platforms have witnessed rapid advances towards chip-scale optoelectronic modulators [13, 14, 15, 16], photoreceivers [17, 18], and high-bitrate signal processing architectures [19, 20]”
- Silicon photonic integration in telecommunications (2015, background): “There are also SiGe electroabsorption modulators [19] that rely on band-edgemovement in SiGe.”
- Ring Resonator Modulators in Silicon for Interchip Photonic Links (2013, unknown): “Using the Franz–Keldysh (FK) effect in Ge or GeSi alloy, very short (∼50 μm) EA modulators have been demonstrated [63]–[67], with efficiency of ∼2 dB/V and speeds beyond 40 Gb/s.”
- Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies (2021, unknown): “The FK effect and the QCS effect provide possible routes to implement compact, low-power, and high-speed electro-absorption modulators (EAMs) in SiPh.(31,143,144,146,149) Under the influence of an applied electric field, the band edge tilts to enhance the absorption coefficient for GeSi bulk materia”