Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory

By Myoung‐Jae Lee, Sun Il Kim, Chang Bum Lee, Huaxiang Yin, Seung‐Eon Ahn, B. Kang, K. H. Kim, J. C. Park, Changjung Kim, I. Song and 6 more. 2009

213 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/e1ca07f9836dc98ee3d5b689b30be72e23b9dd8e

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In Electrical and Electronic Engineering

1. H. Akinaga
2. Hisashi Shima

Citations in the corpus

• Resistive Random Access Memory (ReRAM) Based on Metal Oxides (2010, background): “The resistance switching in this concave structure has been reported with NiO [ 66 ], TiOx [53] and HfOx [29] resistanceswitchinglayers.InthecaseofTiOx ReRAM,the comparison of the resistance switching performance depending on the memory element structure and crossbar-type and via-hole-type devices h”