Ferromagnetic resonance in Ga 1 − x Mn x As : Effects of magnetic anisotropy
By X. Liu, Y. Sasaki, Jacek K. Furdyna. 2003
195 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/dfa1bfce0a9b1e1e2f013eb009c4ebe8570c9465
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Materials Chemistry
Citations in the corpus
- Observation of the spin-Seebeck effect in a ferromagnetic semiconductor. (2010, background): “In GaMnAs, the magnetization direction, and therefore the direction of σ , can be designed using epitaxial strain to be in plane or out of plan”
- Evidence for reversible control of magnetization in a ferromagnetic material by means of spin–orbit magnetic field (2008, background): “(Ga,Mn)As, epitaxially grown on the (001) surface of GaAs, is compressively strained, which results in magnetization M lying in the plane of the layer perpendicular to the growth direction, with two easy axes along the [100] and [010] crystallographic direction”