Evidence for reversible control of magnetization in a ferromagnetic material by means of spin–orbit magnetic field

By A. Chernyshov, M. Overby, X. Liu, J. K. Furdyna, Y. Lyanda-Geller, Leonid P. Rokhinson. 2008

487 citations recorded by the source corpus.

The magnetization of a magnetic random-access memory is usually controlled by the injection of an externally polarized spin-current. A proof-of-principle demonstration shows that this could instead be manipulated with local fields generated by spin–orbit interactions of an unpolarized current.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4beb16e1f9f9c3205436f4fc441527db9f5f124d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Pietro Gambardella
2. T. Jungwirth
3. J. Sinova
4. A. Manchon
5. T. Dietl
6. I. Miron
7. Axel Hoffmann
8. Kevin Garello

In Materials Chemistry

1. T. Dietl
2. Hideo Ohno
3. J. Sinova
4. T. Jungwirth
5. N. Nagaosa
6. Pietro Gambardella
7. A. Manchon
8. J. Wunderlich

Citations in the corpus

• Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems (2018, background): “…focus of the present section is to discuss the experiments performed on bulk non-centrosymmetric magnets, including dilute magnetic semiconductors (Chernyshov et al., 2009; Endo et al., 2010; Fang et al., 2011; Kurebayashi et al., 2014), magnetic half-heusler compounds (Ciccarelli et al., 2016)…”
• Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “27), can serve to rotate magnetization by 90o (Chernyshov et al., 2009) or even by 180o (Endo et al., 2010b) in (Ga,Mn)As films.”
• Antiferromagnetic spintronics (2016, background): “…(Miron et al., 2010) in transition metals, as well as in noncentrosymmetric magnetic semiconductors [(Ga,Mn)As, (Ga,Mn)(As,P), and (Ni, Mn)Sb] (Chernyshov et al., 2009; Fang et al., 2011; Kurebayashi et al., 2014; Ciccarelli et al., 2016) have attracted much attention in the past five years,…”
• Magnetization oscillations and waves driven by pure spin currents (2016, methodology): “Several physical mechanisms have been utilized to create pure spin currents, including the spin-Hall effect (SHE) [37–40], the nonlocal spin injection (NLSI) [41–43], the spin Seebeck effect [44,45], and the inverse spin galvanic effect [46,47].”
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “Because of this specific form of the asymmetric non-equilibrium charge redistribution with a conserved total number of carriers, the current induced SOT requires broken inversion symmetry terms in Hso (Chernyshov et al., 2009; Fang et al., 2011; Garate and MacDonald, 2010; Manchon and Zhang, 2008, 2”
• Interface-Induced Phenomena in Magnetism (2016, unknown): “A spin torque arising from spin-orbit interactions has been demonstrated in GaMnAs [Chernyshov et al., 2009] and other ferromagnets [e.”
• Emergent phenomena at oxide interfaces. (2012, background): “where the spin precession is manipulated by the electric field, as well as the spin-galvanic effect, that is, the current-induced spin polarization or the current control of the magnetizatio”
• New perspectives for Rashba spin-orbit coupling. (2015, background): “This torque was first observed in (Ga,Mn)As [65] where straining the zinc-blende structure is responsible for the emergence of p-linear Dresselhaus SO coupling.”