Investigation of a Class-J Power Amplifier With a Nonlinear $C_{\rm out}$ for Optimized Operation

By J. Moon, Jungjoon Kim, Bumman Kim. IEEE transactions on microwave theory and techniques, 2010

159 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/df9e51fb03bc33a14816e84be8529e5b10ed13a6

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In Electrical and Electronic Engineering

1. Jim W. Milligan
2. S. T. Sheppard
3. Simon Wood
4. R. Pengelly
5. W. Pribble
6. D. Nirmal

Citations in the corpus

• A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs (2012, methodology): “…typically 3.5 and 10 GHz, provide accurate results for both narrowband and broadband designs up to 20 GHz with narrowband power levels in excess of 100 W. Packaged model parameters have also been developed to support discrete transistors using the same intrinsic model used for MMIC PA design.”