Low chirp observed in directly modulated quantum dot lasers
By H. Saito, K. Nishi, A. Kamei, S. Sugou. IEEE Photonics Technology Letters, 2000
194 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/dd39a97c1717e38b1ed78cf429c00658e7a19481
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- InGaAs Quantum-Dot Mode-Locked Laser Diodes (2009, background): “waveguide losses [25], reduced spontaneous emission [50], and potentially low linewidth enhancement factor [51], all leading to improvements in the noise performance [52].”
- Room-temperature operation of InAs quantum-dash lasers on InP [001] (2001, background): “search has yielded impressive laser diode results on GaAs, including: 1) a very low room-temperature threshold current density [2]–[5]; 2) the observation of an ultra-small linewidth enhancement factor [6], [7]; and 3) the attainment of a 201-nm”
- Long-wavelength InP-based quantum-dash lasers (2002, background): “W ITHIN the last couple of years, a large improvement in the device quality of quantum-dot lasers was achieved [1]–[5] and specific quantum-dot properties like extremely low threshold current densities [6], reduced temperature sensitivity [7], [8], ultra wide gain bandwidth [9] and reduced chirp [10”
- Impact of intraband relaxation on the performance of a quantum-dot laser (2003, background): “UE TO THE discrete nature of their density of states, quantum-dot (QD) lasers have certain advantages compared with quantum-well (QW) devices: lower threshold current densities [1] combined with decreased temperature sensitivity [2], [3], low chirp [ 4 ] and emission wavelengths that are suited for ”