InGaAs Quantum-Dot Mode-Locked Laser Diodes

By M. G. Thompson, A. Rae, M. Xia, R. Penty, Ian H. White. IEEE Journal of Selected Topics in Quantum Electronics, 2009

210 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/bb70612c10c5d783f113013e4727e27b8ec827cc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Hon Ki Tsang
2. John E. Bowers

In Electrical and Electronic Engineering

1. Justin C. Norman
2. Hon Ki Tsang
3. John E. Bowers
4. Po Dong

Citations in the corpus

• High-channel-count 20  GHz passively mode-locked quantum dot laser directly grown on Si with 41  Tbit/s transmission capacity (2018, background): “While looking back at the QD material properties, it is exciting to note that the inherent inhomogeneously broadened gain spectrum, ultrafast carrier dynamics, large gain and saturable absorber (SA) saturation energy ratio, and low amplified spontaneous emission (ASE) noise level make QDs a perfect ”