A single-atom electron spin qubit in silicon

By J. Pla, K. Tan, Juan Pablo Dehollain, W. H. Lim, J. Morton, D. Jamieson, Andrew Dzurak, A. Morello. Nature, 2012

763 citations recorded by the source corpus.

A single atom is the prototypical quantum system, and a natural candidate for a quantum bit, or qubit—the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the nitrogen–vacancy-centre point defect. Solid-state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger-scale quantum processors. Coherent control of spin qubits has been achieved in lithographically defined double quantum dots in both GaAs (refs 3–5) and Si (ref. 6). However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent in atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot read-out. We use electron spin resonance to drive Rabi oscillations, and a Hahn echo pulse sequence reveals a spin coherence time exceeding 200 µs. This time should be even longer in isotopically enriched 28Si samples. Combined with a device architecture that is compatible with modern integrated circuit technology, the electron spin of a single phosphorus atom in silicon should be an excellent platform on which to build a scalable quantum computer.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d9dc27b9cb80ad7c6c5c3d9f3c9310e90481d4de

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Citations in the corpus

Cryogenic MOS Transistor Model (2018, background): “Large-scale integration of silicon spin qubits [11], [12] and cryo-CMOS control circuits is envisioned to take solid-state quantum computing to the next level [13].”
Silicon quantum electronics (2012, methodology): “While the manipulation of individual spin qubits in silicon is still in its infancy, the results obtained so far (Maune et al., 2012; Pla et al., 2012) have confirmed that silicon is an excellent host for spin qubits, as expected on the basis of the weak spin-orbit coupling and the abundance of…”
Hybrid quantum circuits: Superconducting circuits interacting with other quantum systems (2012, background): “(mainly nuclear spins) has so far limited coherence times to hundreds of microseconds or less (Bluhm et al., 2011). Atomic impurities, such as phosphorus in silicon (Kane, 1998; Morello et al., 2010; Pla et al., 2012), Er3+ ions in Y 2SiO5 crystal (Guillot-Noel et al., 2006), and nitrogen-vacancy (N”
Storing quantum information for 30 seconds in a nanoelectronic device. (2014, methodology): “3, using a method developed in earlier work [20, 22].”
Training Schrödinger’s cat: quantum optimal control (2015, background): “Control strategies for spins in semiconductors currently trade off conceptually simple single-spin schemes [197, 316] with more robust and accessible two- and three spin techniques [211, 274, 313].”
Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors (2020, background): “quantum processors in silicon [23]–[30] and for assessing the benefits of temperature scaling as an alternative to traditional scaling [9], [10], [31].”
A CMOS silicon spin qubit (2016, neutral): “Measured T (cid:2) 2 values range between 50 ns and 2 m s (refs 10–14).”