A CMOS silicon spin qubit

By R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R. Lavieville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer and 1 more. Nature Communications, 2016

574 citations recorded by the source corpus.

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal–oxide–semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform. Silicon is a promising material for realization of quantum processors, particularly as it could be naturally integrated with classical control hardware based on CMOS technology. Here the authors report a silicon qubit device made with an industry-standard fabrication process on a CMOS platform.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6233c76657972fd59f458b6b541daec789ec5a3b

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Citations in the corpus

Materials challenges and opportunities for quantum computing hardware (2021, methodology): “Hole-spin qubits in CMOS silicon (170), Ge nanowires (194), and Ge/SiGe heterostructures (195) have been experimentally demonstratedwith single-qubit gate times of ≤10 ns, allowing for a ratio of coherence time to gate time exceeding a few hundred (196).”
Qubits made by advanced semiconductor manufacturing (2021, methodology): “Although the first qubits in quantum dots fabricated on wafer-scale in industrial foundries have been presented [4, 40], they rely on electron-beam lithography and avoid CMP for the active device area.”
Single artificial atoms in silicon emitting at telecom wavelengths (2020, background): “Individual electronencoded artificial atoms either formed by impurities [1] or quantum dots [2, 3] have emerged as a promising solution for silicon-based integrated quantum circuits.”
A hole spin qubit in a fin field-effect transistor above 4 kelvin (2021, methodology): “The obtained values for T ∗2 are consistent with the EDSR spectral width (Supplementary Section 9), and a spin relaxation time T1> 10µs was found at 4.2 K (Supplementary Section 12).”
Quantum computing: A taxonomy, systematic review and future directions (2020, unknown): “Qubit Technologies Trapped Ion Qubits [299] Superconducting Qubits [300] Silicon Qubits [301] Photonic Qubits [302] Topological Qubits [303]”
Cryogenic MOS Transistor Model (2018, background): “Large-scale integration of silicon spin qubits [11], [12] and cryo-CMOS control circuits is envisioned to take solid-state quantum computing to the next level [13].”
Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K (2018, background): “This is much higher than the Ft required by the qubit control and read-out circuits [14], [33].”