Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

By Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling, Jürgen Michel. 2009

270 citations recorded by the source corpus.

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with temperature due to thermal excitation of electrons into the direct Γ valley, exhibiting robustness to heating effects. These unique properties of direct gap emission in an indirect gap material agree with our theoretical model and make Ge a promising light emitting material in 1550 nm communication band.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d80e2073697644020e7357597c6d95f3215af1a4

How researchers see this paper

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In Biomedical Engineering

1. Jürgen Michel

In Electrical and Electronic Engineering

1. Jürgen Michel
2. Xiaochen Sun
3. Lionel C. Kimerling
4. Jifeng Liu
5. John E. Bowers
6. Di Liang

In Materials Chemistry

1. John E. Bowers
2. Di Liang

Citations in the corpus

• Ge-on-Si laser operating at room temperature. (2010, background): “2% tensile strained Ge reported earlier [13-15].”
• Toward a Germanium Laser for Integrated Silicon Photonics (2010, background): “The effect of n-type doping on the enhancement in direct-gap spontaneous emission has been clearly shown in photoluminescence studies [4]–[6].”