Silicene field-effect transistors operating at room temperature.

By L. Tao, E. Cinquanta, D. Chiappe, C. Grazianetti, M. Fanciulli, Madan Dubey, A. Molle, Deji Akinwande. Nature Nanotechnology, 2015

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Towards Oxide Electronics: a Roadmap (2019, background): “Al2O3 capping of silicene for example unable the ex-situ characterization as well as the realization of the first transistor based on this material [422].”
A microprocessor based on a two-dimensional semiconductor (2016, positive): “t complex circuitry so far made from a two-dimensional material. Two-dimensional (2D) materials, such as semiconducting transition metal dichalcogenides (TMDs) [4, 5], black phosphorus [6], silicence [7] and others, are considered promising candidates for future generations of electronic circuits. A”
Tailoring the mechanical properties of 2D materials and heterostructures (2018, background): “(e) The buckled structure of single layer silicene from [88].”
Direct evidence of metallic bands in a monolayer boron sheet (2015, background): “e allotropes are semiconductors, with a large band gap at the Fermi level. Since the discovery of graphene in 2004 [8, 9, 10, 11], there is a boom of research on monolayer materials, such as silicene [12, 13, 14], germanene [15, 16, 17] and so on [18, 19, 20, 21]. Monolayer boron has also been inten”
Nanomaterials in transistors: From high-performance to thin-film applications (2015, background): “for X-enes compared with other nanomaterials is that X-enes tend to be highly reactive in air, making even simple device structures extremely difficult to realize (21).”