Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product

By Yimin Kang, Han-din Liu, M. Morse, Mario Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, Hui-wen Chen and 6 more. 2009

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Graphene Photonics and Optoelectroncs (2010, methodology): “Acheson reported58 a method of producing graphite from SiC in as early as 1896, and the segregation of graphene from Ni(111) was investigated over 30 years ago60.”
Regenerative oscillation and four-wave mixing in graphene optoelectronics (2012, background): “optical signal processing. 2 Sub-wavelength nanostructures in monolithic material platforms have witnessed rapid advances towards chip-scale optoelectronic modulators [13, 14, 15, 16], photoreceivers [17, 18], and high-bitrate signal processing architectures [19, 20]. Coupled with ultrafast nonlinea”
Roadmapping the next generation of silicon photonics (2023, background): “Low-voltage APDs which have large -3dB O/E BW, high overall responsivity [114], and simultaneously low noise will be beneficial for receiver SNR improvement [115, 116].”
High-performance Ge-on-Si photodetectors (2010, methodology): “Ge/Si APDs were recently successfully fabricated through both blanket epitaxial Ge growt”
Silicon photonic integration in telecommunications (2015, background): “Shown in the middle is a metal-semiconductor-metal (MSM) photodiode [22] and at the right avalanche photodiodes (APDs) [23].”