High-performance Ge-on-Si photodetectors

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Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate (2011, background): “Although Si-based light generation and modulation technologies have been explored extensivel”
Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz (2018, background): “germanium or a III-V compound semiconductor [3, 4], leaving a big challenge for direct monolithic integration with the complementary metaloxide-semiconductor (CMOS) technology and in achieving high bandwidth limited by the absorbing materials’ poor electrical properties.”
Photonic ADC: overcoming the bottleneck of electronic jitter. (2012, methodology): “Such an ADC would use microring-resonator filters, a silicon carrier-depletion modulator [43–45], and germanium [46] or silicon defect-based [47] photodetectors.”
A micromachining-based technology for enhancing germanium light emission via tensile strain (2012, methodology): “Equation (4) is solved under steady-state conditions, with the injected carrier concentrations (DN and DP) and the occupation factors (xG and xL) calculated from Fermi–Dirac statistics.”