High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode

By Ning Li, Xiaowei Li, S. Demiguel, Xiaoguang Zheng, J. Campbell, D. Tulchinsky, K. Williams, T. Isshiki, G. Kinsey, R. Sudharsansan. IEEE Photonics Technology Letters, 2004

133 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d01caf7b19a87e10bf09cc3fe23b7df5b46cffed

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Tadao Nagatsuma
2. Hiroshi Ito
3. Phaedon Avouris
4. Fengnian Xia
5. Tadao Ishibashi
6. Joerg Appenzeller

In Electrical and Electronic Engineering

1. Tadao Ishibashi
2. Tadao Nagatsuma
3. Phaedon Avouris
4. Fengnian Xia
5. Yoshifumi Muramoto
6. Hiroshi Ito
7. Thomas Mueller
8. K. Novoselov

Citations in the corpus

• High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes (2004, background): “21 summarizes the reported maximum RF output powers against the operation frequency for UTC-PDs [13], [38], [72]–[77] and conventional pin PDs [71], [78]–[80].”
• Graphene photodetectors for high-speed optical communications (2010, background): “Further increase in the incident power leads to photocurrent saturation due to the screening effect as in conventional photodiode”
• High‐power RF photodiodes and their applications (2009, unknown): “The former is sometimes called as chargecompensated (CC) structure [62].”