High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes

By Hiroshi Ito, S. Kodama, Yoshifumi Muramoto, T. Furuta, Tadao Nagatsuma, Tadao Ishibashi. IEEE Journal of Selected Topics in Quantum Electronics, 2004

389 citations recorded by the source corpus.

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Unitraveling-Carrier Photodiodes for Terahertz Applications (2014, methodology): “of pulse photoresponse for a UTC-PD with an InP depletion layer [2].”
Ultra-compact integrated graphene plasmonic photodetector with bandwidth above 110 GHz (2018, background): “, germanium or IIIV compound semiconductor [3, 4], leaving a big challenge for direct monolithic integration with the complementary metal-oxidesemiconductor (CMOS) technology and achieving high bandwidth limited by materials’ poor electrical quality.”
High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer (2010, background): “This is caused by the bandwidth improvement due to the self-induced electric field in the graded-doped InGaAs absorber [14].”
High‐power RF photodiodes and their applications (2009, neutral): “4a and b, respectively [28] [29].”
Photonic generation of continuous THz wave using uni-traveling-carrier photodiode (2005, background): “the depletion layer is less significant in a UTC-PD than in a p-i-n PD [11]–[13], [21].”
TeraHertz Photonics for Wireless Communications (2015, neutral): “One of the key enabling technologies for the development of photonics enabled THz communications has been the unitravelling carrier (UTC) PD [16].”