Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

By J. Babcock, S. Balster, A. Pinto, C. Dirnecker, P. Steinmann, R. Jumpertz, B. El-Kareh. IEEE Electron Device Letters, 2001

182 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/cf09de6f256c4ebec77ff51ecc5cce01e32ca489

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Xiongfei Yu
2. Chunxiang Zhu
3. Hang Hu
4. A. Chin
5. M. F. Li
6. B. Cho
7. D. Kwong
8. P. Foo

Citations in the corpus

• High-density MIM capacitors using Al 2 O 3 and AlTiO x dielectrics (2002, background): “Although the first and second-order voltage coefficients are larger than SiO and Si N [ 11 ] and may be due to the thinner thickness used here, the capacitance change is only 2% for a 3.3 V applied voltage that is acceptable for most circuit applications.”
• A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics (2003, background): “UNTIL recently, the metal–insulator–metal (MIM) capacitors have attracted great attention in silicon integrated circuit (IC) applications because of their high-conductive electrode and low parasitic capacitance [1]–[3].”