High-density MIM capacitors using Al 2 O 3 and AlTiO x dielectrics

By S. B. Chen, C. Lai, A. Chin, J. C. Hsieh, Jianchu N. Liu. 2002

166 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9d2ba586404041a8f38f414f8f0216f06685684d

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Xiongfei Yu
2. Chunxiang Zhu
3. Hang Hu
4. D. Kwong
5. A. Chin
6. P. Foo
7. M. F. Li
8. M. Yu

Citations in the corpus

• A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics (2003, background): “Therefore, adoption of high- material is a very efficient way to increase the capacitance density [5].”