A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics

By Xiongfei Yu, Chunxiang Zhu, Hang Hu, A. Chin, M. F. Li, B. Cho, D. Kwong, P. Foo, M. Yu. IEEE Electron Device Letters, 2003

139 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8a2cb7fb81b0aa2aec9b989d4b2aded9f51cc5f8