Multilevel resistive switching with ionic and metallic filaments

By Ming Liu, Z. Abid, Wei Wang, Xiaoli He, Qi Liu, W. Guan. 2009

157 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/ccd6e1c8f37a11ae7410ad34ea7b29cda8a7bb77

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Ilia Valov
2. Yuchao Yang
3. Michael N. Kozicki
4. Chao Chen
5. Fei Zeng
6. F. Pan
7. Shimeng Yu

In Polymers and Plastics

1. Ilia Valov
2. Michael N. Kozicki
3. Yuchao Yang

Citations in the corpus

• Cation-based resistance change memory (2013, background): “Other insulators used in ReRAM cells, e.g., ZrO2 [49, 56] or TiO2 [43, 57] are able to conduct both cations and anions.”
• Nonvolatile resistive switching memories-characteristics, mechanisms and challenges (2010, background): “Similar switching of three resistance states are reported in Ti/ZrO2/n-Si structure by LIU et al[85], which is caused by the filaments due to ionic trap-controlled space charge limited current conduction (SCLC) and metallic bridge formed at different voltages.”