Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

By Heejun Yang, J. Heo, Seongjun Park, H. Song, D. Seo, Kyung‐Eun Byun, Philip Kim, Inkyeong Yoo, Hyun‐Jong Chung, Kinam Kim. Science, 2012

911 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. (2014, background): “Likewise, a vertical heterojunction between a semimetal (graphene) and a semiconductor (MoS2) creates a two-dimensional Schottky barrier at the interface that can be tuned by a gate voltage.(161) This concept was extended further to create a functional inverter by vertical stacking n-type and p-type”
Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor (2020, background): “Two-dimensional (2D) materials with atomic thickness and flatness have shown great potential for numerous applications in electronics (14-17) and optoelectronics (18-20).”
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device (2016, background): “or junctions if the Si-surface is defects-free and with saturated dangling bonds55. An ideal, trap free interface would result in unpinned Fermi level and yield a Schottky barrier height Φ�=Φ� −Χ�𝑖 , (11) (Schottky-Mott relation) in the range 0.45÷0.55 �� for undoped graphene. The Fermi level unpin”