Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
By A. Di Bartolomeo, Filippo Giubileo, Giuseppe Luongo, L. Iemmo, N. Martucciello, G. Niu, M. Fraschke, O. Skibitzki, T. Schroeder, G. Lupina. 2016
153 citations recorded by the source corpus.
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity ( 3 A W − 1 for white LED light at 3 mW cm − 2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters, and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. We also introduce a new phenomenological graphene/semiconductor diode equation, which well describes the experimental I–V characteristics both in forward and reverse bias.
Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/056a725e7d65fbee805e1ff5923bcd0697108787
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Citations in the corpus
- The role of contact resistance in graphene field-effect devices (2017, background): “Graphene extraordinary properties have been already exploited for several applications such as gas sensors [15], photodetectors [16, 17], solar cells [18], heterojunctions [19], field-effect transistors [20,21], transparent conductors for touch screens [22,23], electromagnetic interference shielding”