Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects
By Daesu Lee, S. Baek, T. H. Kim, J.-G. Yoon, C. M. Folkman, C. Eom, T. Noh. 2011
279 citations recorded by the source corpus.
We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization-hysteresis loop with which we confirmed that the diode-polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current‐voltage (J‐V) behavior is changed from Ohmic (i.e.,J ∝V) to nonlinear (i.e., J ∝ V n with n 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.
Subfields: Biomedical Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/c0f09751bbdebee437c69a7c00e842c3cba7cc5e
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Citations in the corpus
- Role of domain walls in the abnormal photovoltaic effect in BiFeO3 (2013, background): “The solid line represents the fit with equation (4).”
- Towards Oxide Electronics: a Roadmap (2019, background): “The presence of an Ebi and its dependence on polarization produces interesting features, such as switchable rectifying behavior [714,752,753], but in this case the efficiency is limited by the ferroelectric bandgap [721] and one cannot expect greater efficiencies than those observed for semiconducto”