Ohmic contacts to Gallium Nitride materials

By Giuseppe Greco, F. Iucolano, Fabrizio Roccaforte. 2016

296 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/bfa73768609629a6e8fc8353ccddd8b7899871f1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Guangnan Zhou
2. Hongyu Yu
3. Fanming Zeng
4. Wenmao Li
5. Hui Wang
6. T. Duan
7. J. An
8. Lingli Jiang

Citations in the corpus

• A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “The most used stacks include Ti/x/x/Au structures [72], where x represents met l such as Al, Ni, Ti, Mo an so forth.”