Formation of an electric dipole at metal-semiconductor interfaces

By R. T. Tung. 2001

279 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics

View Paper: https://www.semanticscholar.org/paper/ba107c0ff7de55821c74429bfb8e53dd65f1833a

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In Atomic and Molecular Physics, and Optics

1. P. Stradins
2. Suhuai Wei
3. Yuanyue Liu

Citations in the corpus

• Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes (2011, unknown): “According to bond-polarization theory [20,22],”
• Why some interfaces cannot be sharp (2005, background): “Even interfaces between formally neutral planes can have interface dipoles resulting from band offsets and bond polarization”
• Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier (2016, background): “(ii) An interface dipole formed by the charge redistribution at the interface can shift the electronic levels from their original positions, leading to a deviation from the Schottky-Mott limit (2, 9, 20, 21).”