Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
By Yuanyue Liu, P. Stradins, Suhuai Wei. Science Advances, 2016
597 citations recorded by the source corpus.
The Schottky barrier for carrier injection into 2D semiconductors can be effectively tuned by using 2D metals. Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.
View Paper: https://www.semanticscholar.org/paper/f629fe60b49c53c0809ebf8f7b4f919fa371677c
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Citations in the corpus
- MXetronics: Electronic and photonic applications of MXenes (2019, background): “metal-semiconductor interface, which can release the Fermi-level pinning effect.[70]”
- Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “In an ideal scenario, without any FLP, Fermi level of low ΦM contacts (typically ΦM 4.5 eV) can align closer to the CBE of MoS2 (since the electron affinity of MoS2 is about 4.2 eV) resulting in smaller SBH for electrons and, likewise, the Fermi level of large ΦM contacts (typically ΦM > 5 eV) can”
- Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect (2017, background): “e Gr/Si interface. 2 1. Introduction The scientific and engineering research on the heterojunction formed by graphene with 2D or 3D semiconductors (Gr/S junction) has recently entered an hectic phase [1, 2, 3, 4, 5, 6], matching or overcoming the activity on graphene field-effect transistors [7, 8, ”