Tuning the graphene work function by electric field effect.

By Young‐Jun Yu, Yue Zhao, S. Ryu, L. Brus, Kwang S. Kim, Philip Kim. Nano letters (Print), 2009

1,381 citations recorded by the source corpus.

We report variation of the work function for single and bilayer graphene devices measured by scanning Kelvin probe microscopy (SKPM). By use of the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point. Upon biasing the device, the surface potential map obtained by SKPM provides a reliable way to measure the contact resistance of individual electrodes contacting graphene.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b60888096c33cc05b0c78cb103432120b056d768

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes (2011, background): “However, in reverse bias, where the applied voltage can be larger than 10 V, EF starts changing dramatically [21] and the fixed-SBH assumption clearly no longer holds.”