Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
By A. David, M. Grundmann. 2010
182 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/b1bb32e0c97c6c95a8f8aa468a900af5777c0bdb
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “However, recent experimental and theoretical work suggests that and also depend upon the square of the wave function overlap [29], [30].”