Strained silicon as a new electro-optic material

By R. Jacobsen, K. Andersen, P. Borel, J. Fage-Pedersen, L. Frandsen, O. Hansen, M. Kristensen, Andrei V. Lavrinenko, Gaid Moulin, H. Ou and 3 more. Nature, 2006

668 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ad4ad25fbc3eebec12cf26f980697def9fdc3853

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Silicon optical modulators (2010, background): “The introduction of strain to crystalline silicon has also been shown to induce the otherwise absent Pockels effect [95], which could provide a further modulation option in the future.”
Non-Invasive On-Chip Light Observation by Contactless Waveguide Conductivity Monitoring (2014, neutral): “1 pm/V ( χ (2) = 5 pm/V) that is consistent with other reports of non-intentionally strained silicon waveguides [28].”
Roadmap on silicon photonics (2016, background): “A further approach to achieve modulation in silicon involves straining the silicon waveguide to introduce the Pockels effect [27].”
Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits (2019, methodology): “utilized to enhance the performance of electronic and photonic devices [1-3].”
Expanding the Silicon Photonics Portfolio With Silicon Nitride Photonic Integrated Circuits (2017, positive): “These results were achieved by a strain gradient that was induced by means of a strained silicon nitride overlayer [99].”