A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter

By S. Round, M. Heldwein, Johann W. Kolar, I. Hofsajer, P. Friedrichs. Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005., 2005

154 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/aa3a51fcaf83692000735e95303f3236789e8b41

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In Electrical and Electronic Engineering

1. Leon M. Tolbert
2. Fei Fred Wang
3. Zhong Du
4. Keith McKenzie
5. John N. Chiasson

Citations in the corpus

• Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter (2013, methodology): “In the test, RCD network [44] is used between the gate driver and JFETs to adapt to the different gate characteristics in case of JFETs paralleling.”
• Design and Performance of a 200-kHz All-SiC JFET Current DC-Link Back-to-Back Converter (2009, unknown): “7).”
• Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated (2012, unknown): “The most widely used gate driver for the SiC JFET was proposed a few years ago [17] (Figure 7).”