Scaling Length Theory of Double-Gate Interband Tunnel Field-Effect Transistors

By Lu Liu, D. Mohata, S. Datta. IEEE Transactions on Electron Devices, 2012

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Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials (2015, methodology): “The well known scaling length theory [6] can be used to quantify the effect of gate control on the electric field at the tunnel junction [7].”
Revisiting MOSFET threshold voltage extraction methods (2013, background): “Such definition, although simple, is not always adequate for many modern MOSFETs, including such types as undoped channel multi-gate MOSFETs [5], junctionless transistors [8], tunnel P–I–N FETs [9], ion sensitive FETs [10], nanowire FETs [11], and non-crystalline TFTs [12,13].”
A 2-D Analytical Model for Double-Gate Tunnel FETs (2014, background): “2, the higher order terms play a more important role on capturing a sharper potential profile at the source-channel junction, which strongly influence the electric field profile [11].”