Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

By S. Kanai, Michihiko Yamanouchi, S. Ikeda, Y. Nakatani, Fumihiro Matsukura, Hideo Ohno. 2012

360 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/a55c84bb9e901ea7a459e1dbbc294af85b4aec83

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In Atomic and Molecular Physics, and Optics

1. Juan G. Alzate
2. Kang L. Wang
3. P. Amiri
4. Jordan A. Katine

In Condensed Matter Physics

1. Juan G. Alzate
2. Jordan A. Katine
3. P. Amiri
4. Kang L. Wang

In Electronic, Optical and Magnetic Materials

1. Juan G. Alzate
2. P. Amiri
3. Kang L. Wang

Citations in the corpus

• Low-power non-volatile spintronic memory: STT-RAM and beyond (2013, methodology): “When ultra-fast (<1 ns) voltage pulses are applied, the voltage-induced magnetization dynamics can be used to generate toggle switching of the MTJ by proper timing of the pulse [45, 48, 49], in an analogous fashion to the C-STT switching discussed previously.”
• Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling (2015, background): “, switching) energy dissipation [1]–[4].”