Screw dislocations in GaN: The Ga-filled core model
By J. Northrup. 2001
135 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/a4db845ad2bf2d4b696c23fe698f124265b0c6e5
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement (2008, background): “Nitrogen vacancies and screw dislocations are also contributors to the buffer conductivity [19], [20].”