Tight-binding description of graphene

By S. Reich, J. Maultzsch, C. Thomsen, P. Ordejón. 2002

954 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a20035db8c1a6e7c279dc566fe773a4539cdd7d4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. E. Hwang
2. S. Adam
3. E. Rossi
4. A. Bostwick
5. K. Emtsev
6. T. Seyller
7. J. McChesney
8. A. Di Bartolomeo

In Materials Chemistry

1. E. Rossi
2. E. Hwang
3. S. Adam
4. T. Seyller
5. A. Bostwick
6. K. Emtsev
7. J. McChesney
8. Eli Rotenberg

Citations in the corpus

• Charge transport in disordered graphene-based low dimensional materials (2008, methodology): “The values for γ 0 2 and σ0 2 have been calculated by Reich et al. by comparing and fi tting band structures from ab initio and tight-binding calculations [ 68 ].”
• Electronic transport in two-dimensional graphene (2010, background): “ point is given by E (q) = ~v F + Oq=k)2: (1.2) Further details on the band structure of 2D graphene monolayers can be found in the literature (Castro Neto et al., 2009; McClure, 1957; Mcclure, 1964; Reich et al., 2002; Slonczewski and Weiss, 1958; Wallace, 1947) and will not be discussed here. Inst”
• The role of contact resistance in graphene field-effect devices (2017, background): “This is a reasonable approximation for small wavevectors around the K and K′ points [43].”
• Electronic properties of graphene-based bilayer systems (2015, methodology): “ [4,37,38,39]. The interplane nearest-neighbor hopping integral is much weaker, t0 = 0:3{0.4 eV [4,37,38,39]. The integral t0is not well known. The ab initio calculations performed by S. Reich et al. [40] indicate that 0:02t<t0<0:2t depending on the tight-binding parametrization. A t to cyclot”