1.3 μm Submilliamp Threshold Quantum Dot Micro-lasers on Si

By Y. Wan, Justin C. Norman, Qiang Li, M. Kennedy, Di Liang, Chong Zhang, Duanni Huang, Zeyu Zhang, Alan Y. Liu, A. Torres and 5 more. 2017

136 citations recorded by the source corpus.

As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volume manufacturability. Currently, direct heteroepitaxial growth of III–V laser structures on Si using quantum dots as the active region is a vibrant field of research, with the potential to demonstrate low-cost, high-yield, long-lifetime, and high-temperature devices. Ongoing work is being conducted to reduce the power consumption, maximize the operating temperature, and switch from miscut Si substrates toward the so-called exact (001) Si substrates that are standard in microelectronics fabrication. Here, we demonstrate record-small electrically pumped micro-lasers epitaxially grown on industry standard (001) silicon substrates. Continuous-wave lasing up to 100°C was demonstrated at 1.3 μm communication wavelength. A submilliamp threshold of 0.6 mA was achieved for a micro-laser with a radius of 5 μm. The thresholds and footprints are orders of magnitude smaller than those previously reported lasers epitaxially grown on Si.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/17e2b1d355664d6e97af0d99c79ef93bcb37abc4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

  1. Weng W. Chow
  2. John E. Bowers

In Electrical and Electronic Engineering

  1. Justin C. Norman
  2. Weng W. Chow
  3. John E. Bowers
  4. Po Dong

Citations in the corpus