Fabrication of ultralow-loss Si/SiO(2) waveguides by roughness reduction.

By Kevin K. Lee, D. Lim, Lionel C. Kimerling, Jang-Ki Shin, F. Cerrina. Optics Letters, 2001

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Review of Silicon Photonics Technology and Platform Development (2021, methodology): “220 nm de-facto standard was adopted by the research community [9], [10] achieving low losses [11] and tight bending radii”
A compact silicon-on-insulator polarization splitter (2005, background): “good agreement with the literature [10] and are due to sidewall roughness and can be further reduced by controlled oxidation of the waveguide surfaces [10].”
Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices (2003, background): “Thermal oxidation is also desirable for reducing surface roughness [ 3 ].”
Size influence on the propagation loss induced by sidewall roughness in ultrasmall SOI waveguides (2004, methodology): “The roughness parameters have been chosen according to recent measurements obtained on similar structures [ 3 ].”