Electrooptic modulation of silicon-on-insulator submicrometer-size waveguide devices

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Silicon optical modulators (2010, methodology): “Most monolithic devices employed carrier injection, using the plasma dispersion effect for either modulation of the material refractive index or its absorption [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59].”
Demonstration of a Tunable Microwave-Photonic Notch Filter Using Low-Loss Silicon Ring Resonators (2009, background): “While the thermo-optic phase shifters can be tuned in milliseconds, subnanosecond tuning speeds should be achievable using technology currently being explored for the high-speed modulators such as carrier injection or carrier depletion in a reversed biased junction [9], [10].”
Compact Electro-Optic Modulators on a Silicon Chip (2006, methodology): “1), we demonstrated in [22] and [37] the modulation depth of 15 dB with a modulation speed of 1.”
Guiding, modulating, and emitting light on Silicon-challenges and opportunities (2005, background): “The authors in [84] demonstrate stable single-mode laser output with a side-mode suppression of over 55 dB and a linewidth of less than 80 MHz.”