Temperature dependent electron transport in graphene

By Y. Tan, Yuanbo Zhang, Horst L. Stormer, P. Kim. 2007

173 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9d9ee5ccbc466e19eba373fa892a281d18214d2e

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. E. Rossi
2. S. Adam
3. E. Hwang
4. M. Fuhrer
5. Jianhao Chen
6. C. Jang
7. N. M. R. Peres
8. Francisco Guinea

In Electrical and Electronic Engineering

1. E. Hwang
2. E. Rossi
3. S. Adam
4. M. Fuhrer
5. C. Jang
6. Jianhao Chen

In Materials Chemistry

1. E. Rossi
2. S. Adam
3. E. Hwang
4. M. Fuhrer
5. Jianhao Chen
6. C. Jang
7. N. M. R. Peres
8. A. Di Bartolomeo

Citations in the corpus

• Electronic transport in two-dimensional graphene (2010, background): “For very high mobility samples, a sub-linear conductivity, instead of the linear behavior with density, is found in experiments (Chen et al., 2008a; Tan et al., 2007a).”
• Intrinsic and extrinsic performance limits of graphene devices on SiO2. (2007, result): “Finally, we note that although our measurements were performed on clean samples in UHV, the temperature-dependent component of the resistivity is consistent in magnitude with earlier, more limited studies of ρ ( V g , T ) in graphen”