Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography

By M. Austin, Haixiong Ge, Wei Wu, Mingtao Li, Zhaoning Yu, D. Wasserman, S. Lyon, Stephen Y. Chou. 2004

581 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering

View Paper: https://www.semanticscholar.org/paper/9c53abeaf86f4fa93b823fd7b312d24399b37bd6

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In Biomedical Engineering

1. Stephen Y. Chou
2. G. Horowitz

Citations in the corpus

• Impact of polymer film thickness and cavity size on polymer flow during embossing: toward process design rules for nanoimprint lithography (2005, background): “[19] [3] [25] Capillary CapillaryViscous Viscous”
• 6 nm half-pitch lines and 0.04 µm2 static random access memory patterns by nanoimprint lithography (2005, methodology): “PS was selected over (PMMA) poly(methyl methacrylate), a positive EBL resist commonly used for NIL mould fabrication [10, 11 ], as PMMA is a poor etch mask and requires further processing of pattern transfer to Cr with lift-off.”