6 nm half-pitch lines and 0.04 µm2 static random access memory patterns by nanoimprint lithography

By M. Austin, Wei Zhang, Haixiong Ge, D. Wasserman, S. Lyon, Stephen Y. Chou. 2005

139 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e34bc72d24c9b872177dc4ce7af1f38c591ee960

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1. Yiqin Chen
2. Zhiwen Shu
3. Shi Zhang
4. Pei Zeng
5. Huikang Liang
6. H. Duan
7. Mengjie Zheng

Citations in the corpus

• Sub-10 nm fabrication: methods and applications (2021, methodology): “Meanwhile, highdensity features with 6 nm half pitches have been obtained using sub-10 nm edge structures in superlattice materials (figure 6(d)) as the molds [107], as shown in figure 6(g).”