Simulation of non-ionising energy loss and defect formation in silicon

By M. Huhtinen. 2002

206 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/981ce459a194436b5c47065b906612441e9e070d

How researchers see this paper

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In Electrical and Electronic Engineering

1. Robert Walters
2. J. Srour

Citations in the corpus

• Proton nonionizing energy loss (NIEL) for device applications (2003, background): “However, NIEL is still a valuable tool, and it can be used to scale damages produced by different particles and in different environments, even though this is not understood at the microscopic level [ 9 ].”
• Displacement Damage in Silicon Detectors for High Energy Physics (2018, unknown): “Figure taken from [27].”